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  • Process for etching silicon nitride selectively to silicon ...

    A process for etching silicon nitride on the face of a wafer with the face including silicon nitride and silicon oxide comprising the steps of: (a) disposing said wafer in a low pressure chamber; (b) introducing remote generated plasma produced from a gas including SF 6 and …

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    A process for etching silicon nitride on the face of a wafer with the face including silicon nitride and silicon oxide comprising the steps of: (a) disposing said wafer in a low pressure chamber; (b) introducing remote generated plasma produced from a gas including SF 6 and …

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  • Ceramic Technology Makes Hydrogen Infrastructure a

    An investigation of the optical properties of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition (LPCVD) from dichlorosilane (SiH2Cl2, DCS) and ammonia (NH3) mixtures ...

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  • Process for etching silicon nitride selectively to silicon ...

    What is claimed is: 1. A method of enhancing tensile stress in a silicon nitride film, the method comprising: depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than 400° C.; and exposing the deposited silicon nitride film to ultraviolet radiation using a source of the ultraviolet radiation, wherein the step of exposing the deposited ...

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  • Method to increase tensile stress of silicon nitride

    What is claimed is: 1. A method of enhancing tensile stress in a silicon nitride film, the method comprising: depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than 400° C.; and exposing the deposited silicon nitride film to ultraviolet radiation using a source of the ultraviolet radiation, wherein the step of exposing the deposited ...

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  • Chapter 1 CVD technologies for silicon: A quick survey ...

    2001-1-1 · Plasma processes for silicon dioxide also use CO or CO2 with Sill4. FSG is commonly deposited from conventional plasma SiO2 by doping with SiF4 or CF4. Hydrogen-rich, nonstoichiometric silicon nitride is obtained by simple reaction of silane and …

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  • Three-dimensional fabrication of miniature electron

    2002-1-1 · This etch creates v-grooves in a silicon wafer whose normal is parallel to a (100) direction and the depth of the v-groove is W/x/~, where W is the opening in the nitride film. 3D FABRICATION OF MINIATURE ELECTRON OPTICS 107 If the opening in the nitride is larger than ~/~; where t is the wafer thickness, the etch will terminate on the Pyrex.

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  • Method to increase the compressive stress of PECVD

    Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas.

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  • US8377208B2 - System and method for

    A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor ...

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  • What are the Pros and Cons of Titanium? - Monroe

    This invention is intended to solve the problems encountered in the mass production of polycrystalline silicon, when the increase in the size and height of the fluidized-bed reactor, with representing the battle of whole body, contains reaction chamber, is of such a weight that it is difficult for the handling of the reactor during Assembly ...

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  • Method to increase tensile stress of silicon nitride

    What is claimed is: 1. A method of enhancing tensile stress in a silicon nitride film, the method comprising: depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than 400° C.; and exposing the deposited silicon nitride film to ultraviolet radiation using a source of the ultraviolet radiation, wherein the step of exposing the deposited ...

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  • Characterization techniques for nanoparticles:

    2002-1-1 · This etch creates v-grooves in a silicon wafer whose normal is parallel to a (100) direction and the depth of the v-groove is W/x/~, where W is the opening in the nitride film. 3D FABRICATION OF MINIATURE ELECTRON OPTICS 107 If the opening in the nitride is larger than ~/~; where t is the wafer thickness, the etch will terminate on the Pyrex.

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  • Three-dimensional fabrication of miniature electron

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    2021-7-1 · Sintering is the process of compacting and forming a solid mass of material by heat or pressure without melting it to the point of liquefaction. Sintering happens naturally in mineral deposits or as a manufacturing process used with metals, ceramics, plastics, and other materials. The atoms in the materials diffuse across the boundaries of the ...

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  • Characterization techniques for nanoparticles:

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    2021-4-15 · Sintering is the process of compacting and forming a solid mass of material by heat and/or pressure without melting it to the point of liquefaction.. Sintering happens naturally in mineral deposits or as a manufacturing process used with metals, ceramics, plastics, and other materials.

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  • Sintering - Infogalactic: the planetary knowledge core

    2021-4-15 · Sintering is the process of compacting and forming a solid mass of material by heat and/or pressure without melting it to the point of liquefaction. Sintering happens naturally in mineral deposits or as a manufacturing process used with metals, ceramics, plastics, and other materials. The atoms in the materials diffuse across the boundaries of ...

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  • US Patent Application for NANOPARTICLE

    2005-12-30 · Preferred ceramic materials can be selected from steatite, aluminum oxide, zirconium oxide, zirconia-silica, yttria-stabilized zirconium oxide, magnesia-stabilized zirconium oxide, silicon nitride, silicon carbide, cobalt-stabilized tungsten carbide, and the like, as well as mixtures thereof.

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    2019-5-7 · Single fire glazing is where you glaze greenware (unfired pottery) and put it through the kiln only once. Potters have single-fired their work for years and a huge quantity of ceramic items through history was produced this way. Bisque firing (and the introduction of the two-step firing and glazing process) were not discovered until much later.

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    In some applications, aluminum nitride ceramic is preferred because beryllium oxide is a toxic substance and is therefore not as desirable for a manufacturing process or for environmental reasons. In contrast, aluminum nitride ceramic is a cost-effective, non-toxic alternative to beryllium oxide …

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  • US Patent Application for NANOPARTICLE

    2005-12-30 · Preferred ceramic materials can be selected from steatite, aluminum oxide, zirconium oxide, zirconia-silica, yttria-stabilized zirconium oxide, magnesia-stabilized zirconium oxide, silicon nitride, silicon carbide, cobalt-stabilized tungsten carbide, and the like, as well as mixtures thereof.

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    13. Removing the heat and deposition gas and purging the chamber with an appropriate gas, for example, N 2 or Ar and another deposition could be such as Silicon Nitride. 14. After removing the wafer from the process chamber, utilizing remote plasma to clean the chamber prior to the next wafer.

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    2018-1-10 · The air turbine portion is made of materials like silicon carbide and silicon nitride, which are capable of operation up to 2500 degrees F. Much of the turbine exhaust air is used to generate steam. They used steam numbers like 300 psi and 800 degrees F. It is an interesting read. The idea of combined-cycle is a real boost in efficiency.

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